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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199
FEATURES
* HIGH OUTPUT POWER: 1 W * HIGH LINEAR GAIN: 9.0 dB * HIGH EFFICIENCY: 37% (PAE) * INDUSTRY STANDARD PACKAGING * THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100
ABSOLUTE MAXIMUM RATINGS1
(TC = 25 C unless otherwise noted) SYMBOLS VDS VGD VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V A mA W C C RATINGS 15 -18 -12 IDSS 6.0 6.0 175 -65 to +175
DESCRIPTION
The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. The device is available in the "99" package or in chip form. The chip is a twocell die; bonding both cells delivers the rated performance. The NE850 Series Transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
RECOMMENDED OPERATING LIMITS
SYMBOLS VDS TCH GCOMP RG PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS MIN V C dB K 1 9 TYP MAX 10 130 3.0 4
ELECTRICAL CHARACTERISTICS (TC
PART NUMBER PACKAGE OUTLINE SYMBOLS POUT GL CHARACTERISTICS Power Out at Fixed Input Power Linear Gain Collector Efficiency Drain Source Current Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance
= 25C) NE8500199 NE8500100 00 (Chip), 99 UNITS dBm dB % mA mA V mS C/W 330 -3.0 300 60 MIN 28.5 TYP 29.5 9.0 37 200 825 -1.0 MAX TEST CONDITIONS PIN = 21.0 dBm f = 7.2 GHz VDS = 10 V; IDSQ = 200 mA RG = 1K VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 4 mA VDS = 2.5 V; IDS = IDSS Channel to Case
Functional Characteristics
ADD
IDS
Electrical DC Characteristics
IDSS VP gm RTH
California Eastern Laboratories
NE8500100, NE8500199 TYPICAL SCATTERING PARAMETERS (TA = 25 C)
j 50 j 25 S11 10.1 GHz j10 S22 10.1 GHz
0
+90 j 100 +120 +60
+150 S21 0.1 GHz 180 S11 0.1 GHz S12 0.1 GHz S21 10.1 GHz S12 10.1 GHz
+30
S22 0.1 GHz
0
-j 10
-150
-30
-j 25 -j 50
-j 100
-120 -90
-60
S21 MAG: 4.0 / DIV., 20.0 FS S12 MAG: 0.03 / DIV., 0.15 FS
NE 8500100 (2 Cells) VDS = 10 V, IDS = 200 mA FREQUENCY GHZ 0.10 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 MAG 0.990 0.981 0.933 0.884 0.865 0.859 0.850 0.850 0.850 0.852 0.853 0.854 0.854 0.854 0.854 0.850 0.842 0.839 0.836 0.833 0.834 0.832 S11 ANG -18.400 -36.000 -78.900 -120.400 -142.100 -155.700 -164.900 -172.000 -178.000 176.900 172.600 168.400 164.500 161.000 157.500 153.800 150.700 147.700 144.600 141.500 138.200 134.900 MAG 13.477 12.933 10.387 6.899 4.970 3.842 3.083 2.554 2.224 1.942 1.704 1.501 1.383 1.256 1.133 1.048 0.968 0.877 0.811 0.774 0.723 0.657 S21 ANG 168.400 158.100 132.500 106.600 90.700 79.200 69.600 60.300 52.100 45.400 38.600 29.500 22.900 18.200 11.900 3.800 -0.400 -4.800 -11.800 -17.600 -21.500 -25.600 MAG 0.008 0.013 0.026 0.036 0.040 0.041 0.043 0.045 0.049 0.052 0.057 0.060 0.064 0.070 0.077 0.077 0.078 0.085 0.093 0.102 0.111 0.118 S12 ANG 74.200 72.500 53.300 37.500 30.700 28.100 31.000 32.300 33.400 33.100 35.700 34.900 35.800 36.000 34.300 30.300 33.300 35.700 34.200 32.400 29.100 25.500 MAG 0.122 0.131 0.171 0.210 0.235 0.258 0.278 0.302 0.330 0.355 0.382 0.409 0.433 0.457 0.481 0.502 0.521 0.546 0.568 0.592 0.613 0.633 S22 ANG -27.200 -49.100 -92.100 -121.500 -132.500 -138.400 -141.400 -144.100 -146.900 -149.800 -152.700 -156.300 -160.000 -163.600 -167.400 -171.600 -175.000 -178.400 177.800 174.100 170.300 166.400 0.107 0.102 0.209 0.378 0.533 0.689 0.871 0.985 1.010 1.048 1.056 1.083 1.070 1.048 1.007 1.063 1.204 1.213 1.152 1.046 0.962 0.954 K MAG1 (dB) 32.265 29.978 26.015 22.825 20.943 19.718 18.555 17.540 15.948 14.384 13.303 12.227 11.727 11.197 11.166 9.803 8.207 7.348 7.037 7.486 8.138 7.457
S-Parameters include 0.0010" (24.5 m) gold bond wires as follows: Gate, 2 wires, 1 per bond pad, 0.0265" (674m) long each wire Drain, 2 wires, 1 per bond pad, 0.0232" (590 m) long each wire Source, 4 wires, 2 per side, 0.0092" (234 m) long each wire
OUTLINE DIMENSIONS
PACKAGE OUTLINE 99 (Units in mm)
5.20.3 1.00.1 4.0 MIN BOTH LEADS Gate 2.20.2
D D
125 780 290 170
CHIP (00) (Units in m)
4.30.2 Source Drain 0.60.1 5.20.3 11.00.15 15.00.3
4.00.1
640
+.06 0.1 -.02 0.2 MAX 1.70.15
S
G
G
100
5.0 MAX 6.00.2
100
1.2
Die Thickness 140
NE8500100, NE8500199 TYPICAL SCATTERING PARAMETERS (TA = 25 C)
j 50 j 25 S11 10.1 GHz j 100
+120 +90 +60
j10 S22 10.1 GHz
0
+150
+30
S22 0.1 GHz S11 0.1 GHz
180
S21 0.1 GHz
S12 0.1 GHz S21 10.1 GHz S12 10.1 GHz
0
-j 10
-150
-30
-j 25 -j 50
-j 100
-120 -90
-60
S21 MAG: 2.0 / DIV., 10.0 FS S12 MAG: 0.02 / DIV., 0.1 FS
NE 8500100 (1 Cell) VDS = 10 V, IDS = 100 mA FREQUENCY GHZ 0.10 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 MAG 1.000 0.995 0.970 0.915 0.868 0.839 0.813 0.803 0.798 0.797 0.796 0.798 0.799 0.801 0.803 0.804 0.800 0.800 0.802 0.805 0.811 0.816 S11 ANG -8.800 -17.500 -42.300 -77.700 -104.800 -125.600 -141.500 -154.500 -165.700 -175.300 176.400 168.800 161.700 155.400 149.400 143.500 138.300 133.800 129.300 125.000 120.800 116.800 MAG 9.587 9.496 8.950 7.570 6.243 5.191 4.347 3.724 3.284 2.894 2.564 2.308 2.115 1.912 1.729 1.611 1.478 1.342 1.247 1.182 1.099 1.004 S21 ANG 173.800 168.200 151.600 128.200 109.800 95.300 83.100 71.700 61.900 53.300 44.800 34.800 27.100 20.500 12.700 4.100 -1.900 -8.200 -16.200 -23.200 -29.200 -35.200 MAG 0.005 0.008 0.020 0.034 0.042 0.047 0.050 0.052 0.054 0.056 0.057 0.059 0.061 0.064 0.067 0.070 0.068 0.070 0.075 0.081 0.086 0.092 S12 ANG 88.900 83.000 69.500 53.100 42.600 34.000 29.400 26.000 23.200 21.200 20.500 18.200 17.800 17.900 15.900 11.500 10.700 12.600 11.900 10.000 6.900 2.800 MAG 0.396 0.393 0.377 0.338 0.302 0.274 0.256 0.246 0.243 0.243 0.247 0.253 0.260 0.272 0.284 0.296 0.305 0.323 0.344 0.366 0.390 0.414 S22 ANG -4.900 -8.700 -19.900 -35.800 -48.400 -59.000 -67.500 -76.600 -85.900 -95.000 -104.000 -113.200 -122.000 -130.800 -139.300 -148.700 -156.000 -163.400 -171.400 -179.300 172.500 164.300 K -0.020 0.043 0.147 0.279 0.406 0.524 0.675 0.789 0.874 0.953 1.055 1.115 1.164 1.206 1.251 1.264 1.456 1.549 1.511 1.418 1.357 1.312 MAG1 (dB) 32.827 30.745 26.508 23.476 21.721 20.432 19.392 18.550 17.840 17.133 15.097 13.864 12.943 12.013 11.101 10.528 9.366 8.462 7.988 7.798 7.498 7.030
S-parameters include 0.0010" (25.4 m) gold bond wires as follows: Gate, 1 wire, 1 per bond pad, 0.0245" (619 m) long each wire Drain, 1 wire, 1 per bond pad, 0.0248" (631 m) long each wire Source, 2 wires, 2 per side, 0.0090" (229 m) long each wire Note: 1. Gain calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE8500199 LARGE SIGNAL IMPEDANCES
FREQ (GHz) 5.90 6.20 6.40 6.50 ZIN (ohm) 7.08 - j 20.24 8.37 - j 23.28 16.11 - j 41.46 9.30 - j 11.82 ZOUT (ohm) 15.95 - j 5.70 15.36 - j 8.11 18.87 - j 19.33 23.53 + j 3.06
ZIN is the impedance of the input matching circuit as seen by the gate. ZOUT is the impedance of the output matching circuit as seen by the drain.
NE8500100, NE8500199 TYPICAL SCATTERING PARAMETERS (TA = 25 )
j 50 j 25 j 100
+90 +120 +60
j10
S22 10.0 GHz
+150 S21 0.1 GHz S12 0.1 GHz
+30
0
180
S22 0.1 GHz S11 0.1 GHz
0 S21 10 GHz
-j 10 S11 10.0 GHz -j 25 -j 50 -j 100
-150 S12 10 GHz -120 -90 -60
-30
S21 MAG: 3.0 / DIV., 15.0 FS S12 MAG: 0.06 / DIV., 0.30 FS
NE 8500199 VDS = 10 V, IDS = 200 mA FREQUENCY GHZ 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 Note: 1. Gain calculations:
MAG = |S21| |S12|
S11 MAG 0.990 0.916 0.869 0.851 0.840 0.831 0.826 0.824 0.829 0.803 0.784 0.767 0.751 0.726 0.689 0.649 0.604 0.577 0.571 0.611 0.631 ANG -22.700 -91.100 -132.100 -152.900 -166.100 -175.900 176.000 168.800 161.000 152.500 144.700 135.900 125.800 114.100 100.200 83.400 63.200 37.000 5.900 -28.500 -62.900 MAG 14.418 10.211 6.444 4.610 3.591 2.975 2.601 2.341 2.127 1.963 1.929 1.916 1.928 1.951 1.957 2.013 2.067 2.102 2.072 2.030 1.812
S21 ANG 165.500 123.300 94.800 76.600 61.900 49.100 37.300 26.000 13.400 3.400 -8.600 -20.700 -33.500 -47.200 -62.400 -78.800 -96.600 -115.500 -135.700 -157.900 177.300 MAG 0.007 0.024 0.031 0.034 0.038 0.042 0.047 0.053 0.066 0.075 0.084 0.097 0.113 0.130 0.149 0.177 0.206 0.232 0.253 0.277 0.280
S12 ANG 70.100 47.700 33.600 29.000 28.100 26.700 25.400 27.400 25.400 15.200 9.300 3.100 -4.800 -13.200 -23.900 -36.800 -51.800 -68.000 -84.700 -103.200 -123.600 MAG 0.065 0.175 0.221 0.241 0.260 0.278 0.296 0.313 0.345 0.337 0.340 0.358 0.381 0.396 0.402 0.431 0.465 0.500 0.534 0.577 0.587
S22 ANG -64.600 -126.400 -149.100 -159.200 -165.600 -170.800 -174.600 -177.800 176.300 166.200 159.800 154.200 149.500 144.200 137.100 129.400 117.200 102.700 87.200 69.700 47.000
K
MAG1 (dB)
0.097 0.300 0.558 0.797 0.970 1.098 1.129 1.109 0.915 1.007 0.984 0.891 0.767 0.697 0.678 0.601 0.557 0.526 0.512 0.464 0.513
33.138 26.289 23.178 21.322 19.754 16.592 15.244 14.437 15.082 13.658 13.611 12.956 12.320 11.763 11.184 10.559 10.015 9.571 9.133 8.650 8.110
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 01/14/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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